The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Aug. 05, 1996
Applicant:
Inventors:
Craig Allan Cavins, Pflugerville, TX (US);
Hsing-Huang Tseng, Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438261 ; 438787 ; 438791 ; 438909 ;
Abstract
An integrated circuit (10) is formed using jet vapor deposition (JVD) silicon nitride. A non-volatile memory device (11) has a tunnel dielectric layer (27) and an inter-poly dielectric layer (31) that can be formed from JVD silicon nitride. A transistor (12,13,40) is formed that has a gate dielectric material made from JVD silicon nitride. In addition, a passivation layer (47) can be formed overlying a semiconductor device (40) that is formed from JVD silicon nitride.