The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Aug. 26, 1999
Philip J. Tobin, Austin, TX (US);
Rama I. Hegde, Austin, TX (US);
Hsing-Huang Tseng, Austin, TX (US);
David O'Meara, Austin, TX (US);
Victor Wang, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming an oxynitride gate dielectric layer (,) begins by providing a semiconductor substrate (,). This semiconductor substrate is cleaned via process steps (,). Optional nitridation and oxidation are performed via steps (,and,) to form a thin interface layer (,). Bulk oxynitride gate deposition occurs via a step (,) to form a bulk gate dielectric material (,) having custom tailored oxygen and nitrogen profile and concentration. A step (,) is then utilized to in situ cap this bulk dielectric layer (,) with a polysilicon or amorphous silicon layer (,). The layer (,) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (,) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.