The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Jun. 22, 1998
Paul G Tsui, Austin, TX (US);
Hsing-Huang Tseng, Austin, TX (US);
Navakanta Bhat, Austin, TX (US);
Ping Chen, Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming a dual gate oxide (DGO) structure begins by forming a first oxide layer (106) within active areas (110) and (112). A protection layer (108a) is then formed over the layer (106). A mask (114) is used to allow removal of the layers (106 and 108a) from the active area (110). A thermal oxidation process is then used to form a thin second oxide layer (118) within an active area (110). Conductive gate electrodes (120a and 120b) are then formed wherein the first oxide layer (106) and the protection layer (108c) are incorporated into the gate dielectric layer of an MOS transistor (122a). The transistor (122b) has a thinner gate oxide layer that excludes the protection layer (108c).