Hongzhong Xu

Title: **Innovative Contributions of Inventor Hongzhong Xu**

Introduction

Hongzhong Xu is an accomplished inventor based in Gilbert, Arizona, recognized for his significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, he has played a crucial role in advancing innovations that enhance the performance of semiconductor devices.

Latest Patents

One of Hongzhong Xu's latest patents focuses on the enhancement of breakdown voltage (BVdss) and the reduction of ON-resistance in RESURF devices, such as LDMOS transistors. This innovative approach involves careful charge balancing, even in scenarios where body and drift region charge balance may not be optimal. The key features of this patent include:

(i) the introduction of a plug or sinker near the drain, made from the same conductivity type, extending through the drift region into the underlying body region;

(ii) the application of bias voltage (Viso) to a surrounding lateral doped isolation wall coupled to the device's buried layer; and

(iii) the establishment of a variable resistance bridge between the isolation wall and the drift region. This bridge can either be a FET that connects the isolation wall and drift region, receiving a control voltage (Vc) at its gate, or a resistor with a cross-section affecting its resistance and pinch-off to control the percentage of drain voltage coupled to the buried layer via the isolation wall.

Career Highlights

Throughout his career, Hongzhong Xu has exhibited remarkable ingenuity in developing solutions that enhance semiconductor devices. His work at Freescale Semiconductor, Inc. has positioned him as a leading figure in the research and innovation of semiconductor technologies. The impact of his inventions has been recognized across various sectors, contributing to the overall advancement of electronic systems.

Collaborations

Hongzhong Xu has collaborated with notable colleagues, including Richard T. Ida and James D. Whitfield, which has further enriched his work. These collaborations have facilitated the exchange of ideas and expertise, fostering an environment of innovation within the field of semiconductor research.

Conclusion

In conclusion, Hongzhong Xu's innovative approach to semiconductor technology underscores his status as a leading inventor. His contributions, particularly in charge balancing techniques for RESURF devices, have paved the way for improvements in electronic device performance. His ongoing work continues to inspire future advancements in semiconductor technologies and solidifies his role as a pivotal figure in the industry.