The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Mar. 11, 2005
Hongzhong Xu, Gilbert, AZ (US);
Richard T. Ida, Chandler, AZ (US);
Vijay Parthasarathy, Phoenix, AZ (US);
Hongzhong Xu, Gilbert, AZ (US);
Richard T. Ida, Chandler, AZ (US);
Vijay Parthasarathy, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus for ESD protection of LDMOS devices are provided. The apparatus comprises two LDMOS devices, with source, drain and gate contacts parallel coupled. One is the protected device and the other is the protecting device. Each has source region, drain region, gate, first body well region containing the source, second body well region containing the drain and separated from the first body well region by a drift region, an isolation region separated from the first and second body well regions and a buried layer contacting the isolation region. The protecting device has a further region of the same type as the drain, coupling the drain to the isolation region. Its drain connection is made via a contact to its isolation region rather than its drain region. The drift region of the protecting device is desirably smaller and the isolation-body well separation larger than for the protected device.