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For the Inventor, By the Inventor

Shanghai, China

Hong Min Huang

This inventor holds 12 USPTO granted patents and 1 published patent application. Top assignee: Honeywell International Inc.. Active years: 2011-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hong Min Huang. Retrieved from https://idiyas.com/inventor/hong-min-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 75.0

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 37(Granted Patents)


Location History:

  • Pudong, CN (2018 - 2019)
  • Shanghai, CN (2011 - 2021)

Company Filing History:

goldMedal12 out of 16,049 
 
Honeywell International Inc.
 patents

Years Active: 2011-2021

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12 patents (USPTO):Explore Patents
1. 11015082 - Crack-resistant polysiloxane dielectric planarizing compositions, methods and films (2021-05-25),
2. 10947412 - Crack-resistant silicon-based planarizing compositions, methods and films (2021-03-16),
3. 10781349 - Thermal interface material including crosslinker and multiple fillers (2020-09-22),
4. 10597346 - Methods for producing solvents derived from 1-chloro-3, 3, 3-trifluoro-propene (1233zd) (2020-03-24),
5. 10428257 - Thermal interface material with ion scavenger (2019-10-01),
6. 10351499 - Methods for producing solvents derived from 1-chloro-3, 3, 3-trifluoro-propene (1233zd) (2019-07-16),
7. 10287471 - High performance thermal interface materials with low thermal impedance (2019-05-14),
8. 10254650 - Low temperature SC1 strippable oxysilane-containing coatings (2019-04-09),
9. 10155894 - Thermal interface material with ion scavenger (2018-12-18),
10. 10099247 - Anti-reflective coating for sapphire (2018-10-16),
11. 10068830 - Compressible thermal interface materials (2018-09-04),
12. 8053867 - Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants (2011-11-08),

Title: Innovations of Hong Min Huang

Introduction

Hong Min Huang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on developing advanced materials and compositions that enhance the performance and reliability of semiconductor devices.

Latest Patents

Among his latest patents are two notable innovations. The first is titled "Crack-resistant polysiloxane dielectric planarizing compositions, methods and films." This invention involves a composition for planarizing a semiconductor device surface, which includes a catalyst, at least one solvent, and a polysiloxane resin that features both polysilsesquioxane and polydisiloxane blocks. The polydisiloxane blocks are defined by a specific general formula, where R and R' are independently selected from aryl or alkyl groups with substituted or unsubstituted carbons.

The second patent is "Crack-resistant silicon-based planarizing compositions, methods and films." This composition also aims to planarize semiconductor device surfaces and includes a silicon-based material along with a cross-linker that comprises a siloxane compound. The general formula for this compound specifies that R is an aliphatic group, while R, R', R'', R''', R'''', and R'''''' are independently selected from hydrogen or alkyl groups with substituted or unsubstituted carbons.

Career Highlights

Hong Min Huang is currently employed at Honeywell International Inc., where he continues to innovate and develop new technologies. His expertise in semiconductor materials has positioned him as a key player in the industry, contributing to advancements that improve device performance and manufacturing processes.

Collaborations

Throughout his career, Huang has collaborated with several talented individuals, including Ya Qun Liu and Liqiang Zhang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Hong Min Huang's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in the industry, making him a notable figure among inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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