The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Aug. 20, 2008
Hong Min Huang, Shanghai, CN;
Carol Gao, Shanghai, CN;
Zhe Ding, Shanghai, CN;
Albert Peng, Shanghai, CN;
Ya Qun Liu, Shanghai, CN;
Hong Min Huang, Shanghai, CN;
Carol Gao, Shanghai, CN;
Zhe Ding, Shanghai, CN;
Albert Peng, Shanghai, CN;
Ya Qun Liu, Shanghai, CN;
Honeywell International Inc., Morristown, NJ (US);
Abstract
Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.