Company Filing History:
Years Active: 2011
Title: Carol Gao: Innovator in Semiconductor Technology
Introduction
Carol Gao is a prominent inventor based in Shanghai, China. She has made significant contributions to the field of semiconductor technology. Her innovative work focuses on the development of phosphorous-comprising dopants, which are essential for enhancing the performance of semiconductor materials.
Latest Patents
Carol Gao holds a patent titled "Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants." This patent outlines methods for creating phosphorous-doped regions in semiconductor materials. In one embodiment, the phosphorous-comprising dopant includes a phosphorous source, which may consist of a phosphorous-comprising salt, a phosphorous-comprising acid, or phosphorous-comprising anions. Additionally, it incorporates an alkaline material and a liquid medium, showcasing her innovative approach to semiconductor fabrication.
Career Highlights
Carol Gao is currently employed at Honeywell International Inc., where she continues to advance her research in semiconductor technology. Her work has garnered attention for its potential applications in various electronic devices.
Collaborations
Some of her notable coworkers include Hong Min Huang and Zhe Ding, who collaborate with her on various projects within the company.
Conclusion
Carol Gao's contributions to semiconductor technology through her innovative patents and work at Honeywell International Inc. highlight her role as a leading inventor in her field. Her research continues to pave the way for advancements in electronic materials and devices.