Honeywell International Inc.

Hong Min Huang

Ya Qun Liu

Hui Wang

Wei Jun Wang

Liqiang Zhang

Helen Xiao Xu

Liang Zeng

Rajiv R Singh

Jun Hui Liu

Zhe Ding

Bright Zhang

Chao Liu

Ling Shen

Huifeng Duan

Yanming Shen

Wei Chang

Carol Gao

Albert Peng

A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: wherein R, Rare each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.

Crack-resistant polysiloxane dielectric planarizing compositions, methods and films

A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: wherein R is an aliphatic comprising group and R, R, R, R, R, and Rare each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

Crack-resistant silicon-based planarizing compositions, methods and films

A thermal interface material includes, in one exemplary embodiment, at least one polymer, at least one phase change material, at least one crosslinker, and at least one thermally conductive filler. The at least one thermally conductive includes a first plurality of particles having a particle diameter of about 1 micron or less. The at least one thermally conductive filler comprises at least 80 wt. % of the total weight of the thermal interface material. A formulation for forming a thermal interface material and an electronic component including a thermal interface material are also provided.

Thermal interface material including crosslinker and multiple fillers

The production of solvents for applications such as heat transfer, cleaning, and degreasing, for example. In particular, the production of solvents derived from 1-chloro-3,3,3-trifluoro-propene, such as chloro and/or fluoro substituted alkanes and chloro and/or fluoro substituted trifluoropropenyl ethers.

Methods for producing solvents derived from 1-chloro-3, 3, 3-trifluoro-propene (1233zd)

A thermal interface material includes at least one polymer, at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, and hydroxyl carboxylic acid based complexing agents.

Thermal interface material with ion scavenger

A thermal interface material includes, in one exemplary embodiment, a polymer, a phase change material, a first thermally conductive filler having a first particle size, and a second thermally conductive filler having a second particle size. The first particle size is larger than the second particle size. A formulation for forming a thermal interface material and an electronic component including a thermal interface material are also provided.

High performance thermal interface materials with low thermal impedance

A composition for forming a coating is provided including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group; an endcapping agent; and a solvent. A coated substrate, wherein the substrate is a silicon wafer or coated silicon wafer, includes an organic planarization layer in contact with the substrate, a photoresist layer, and a middle layer positioned between the organic planarization layer and the photoresist layer. The middle layer is formed from a composition including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group, an endcapping agent; and a solvent.

Low temperature SC1 strippable oxysilane-containing coatings

A coated substrate includes a sapphire substrate and an anti-reflective coating comprising a silicon-based material, wherein the anti-reflective coating has refractive index of 1.23 to 1.45 and a Mohs hardness of at least 4. A method of coating a sapphire substrate with an anti-reflective coating includes applying a liquid formulation to a sapphire substrate to form a coated substrate, and curing the coated substrate at a temperature of at least 500&#xb0; C. to form an anti-reflective layer on the sapphire substrate.

Anti-reflective coating for sapphire

Provided is a compressible thermal interface material including a polymer, a thermally conductive filler, and a phase change material. A formulation for forming a compressible thermal interface material and an electronic component including a compressible thermal interface material are also provided.

Compressible thermal interface materials

Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.

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Shanghai, China

Hong Min Huang