Company Filing History:

9 out of 5,671

Globalfoundries Inc.

patents

6 out of 12,890

Advanced Micro Devices Corporation

patents

1 out of 945

Globalfoundries U.S. Inc.

patents

Years Active: 2007-2021

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11127674 - Back end of the line metal structure and method (2021-09-21),

2. 8951907 - Semiconductor devices having through-contacts and related fabrication methods (2015-02-10),

3. 8426312 - Method of reducing contamination by providing an etch stop layer at the substrate edge (2013-04-23),

4. 8384161 - Contact optimization for enhancing stress transfer in closely spaced transistors (2013-02-26),

5. 8212346 - Method and apparatus for reducing semiconductor package tensile stress (2012-07-03),

6. 8129276 - Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors (2012-03-06),

7. 8097536 - Reducing metal voids in a metallization layer stack of a semiconductor device by providing a dielectric barrier layer (2012-01-17),

8. 8039400 - Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition (2011-10-18),

9. 7820536 - Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer (2010-10-26),

10. 7781343 - Semiconductor substrate having a protection layer at the substrate back side (2010-08-24),

11. 7763476 - Test structure for determining characteristics of semiconductor alloys in SOI transistors by x-ray diffraction (2010-07-27),

12. 7638424 - Technique for non-destructive metal delamination monitoring in semiconductor devices (2009-12-29),

13. 7491555 - Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device (2009-02-17),

14. 7410885 - Method of reducing contamination by removing an interlayer dielectric from the substrate edge (2008-08-12),

15. 7396718 - Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress (2008-07-08),

Title: Holger S Schuehrer: Innovator in Semiconductor Technology

Introduction

Holger S Schuehrer is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on advanced metal structures and fabrication methods that enhance the performance of semiconductor devices.

Latest Patents

One of Schuehrer's latest patents is titled "Back end of the line metal structure and method." This patent discloses embodiments of a back end of the line (BEOL) metal structure that includes a metal via with at least eight sides and all interior angles at 135° or more. The structure also features a metal wire that is part of a continuous conformal metal layer, with a passivation layer coating the top surface. Another significant patent is "Semiconductor devices having through-contacts and related fabrication methods." This patent outlines methods for fabricating semiconductor device structures, including the formation of dielectric layers and conductive contacts that enhance electrical connectivity.

Career Highlights

Throughout his career, Holger S Schuehrer has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and Advanced Micro Devices Corporation. His expertise in semiconductor technology has positioned him as a key player in the development of innovative solutions that drive the industry forward.

Collaborations

Schuehrer has collaborated with notable professionals in the field, including Kai Frohberg and Ralf Richter. These collaborations have contributed to the advancement of semiconductor technologies and the successful implementation of his patented inventions.

Conclusion

Holger S Schuehrer is a distinguished inventor whose work in semiconductor technology has led to numerous patents and innovations. His contributions continue to shape the future of the industry, making him a significant figure in the realm of technology.

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