The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jun. 25, 2010
Applicants:
Ralf Richter, Dresden, DE;
Kai Frohberg, Niederau, DE;
Holger Schuehrer, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract
By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in the P-channel transistor may be reduced.
Quick Actions:
Richter, Ralf. (2013). Contact optimization for enhancing stress transfer in closely spaced transistors (U.S. Patent No. 8384161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8384161
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