The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Jun. 10, 2005
Kai Frohberg, Niederau, DE;
Matthias Schaller, Dresden, DE;
Joerg Hohage, Dresden, DE;
Holger Schuehrer, Dresden, DE;
Kai Frohberg, Niederau, DE;
Matthias Schaller, Dresden, DE;
Joerg Hohage, Dresden, DE;
Holger Schuehrer, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A technique is provided that allows the formation of contact etch stop layers having different intrinsic stress for different transistors, while substantially avoiding any device degradation owing to the partial removal of the contact etch stop layer. Hereby, an additional thin etch stop layer is provided prior to the formation of the contact etch stop layers, thereby substantially maintaining the integrity of metal silicide regions, when a portion of an initially deposited contact etch stop layer is removed.