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For the Inventor, By the Inventor

Daegu, South Korea

Ho-Jun Lee

USPTO Granted Patents = 15 

 

Average Co-Inventor Count = 4.6

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Gumi, KR (2012)
  • Jung-gu, KR (2012)
  • Gyeongbuk, KR (2015)
  • Daegu, KR (2010 - 2018)
  • Gumi-si, KR (2019 - 2022)

Company Filing History:

goldMedal9 out of 52 
 
Siltron, Inc.
 patents
silverMedal3 out of 31 
 
Lg Siltron Incorporated
 patents
bronzeMedal3 out of 80 
 
Sk Siltron Co., Ltd.
 patents

Years Active: 2010-2022

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15 patents (USPTO):Explore Patents
1. 11214891 - Apparatus for growing single crystalline ingot and method for growing same (2022-01-04),
2. 10435809 - Apparatus for growing single crystalline ingot and method for growing same (2019-10-08),
3. 9905656 - Semiconductor substrate (2018-02-27),
4. 9583575 - Semiconductor substrate (2017-02-28),
5. 9153450 - Method for manufacturing gallium nitride wafer (2015-10-06),
6. 8354289 - Method for manufacturing gallium nitride wafer (2013-01-15),
7. 8198649 - Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same (2012-06-12),
8. 8158501 - Compound semiconductor substrate grown on metal layer, method of manufacturing the same, and compound semiconductor device using the same (2012-04-17),
9. 8158496 - Method for preparing compound semiconductor substrate (2012-04-17),
10. 8138003 - Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches (2012-03-20),
11. 8124497 - Method of manufacturing nitride semiconductor device (2012-02-28),
12. 7915698 - Nitride semiconductor substrate having a base substrate with parallel trenches (2011-03-29),
13. 7816241 - Method for preparing compound semiconductor substrate (2010-10-19),
14. 7723217 - Method for manufacturing gallium nitride single crystalline substrate using self-split (2010-05-25),
15. 7708832 - Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate (2010-05-04),

Title: The Innovative Journey of Ho-Jun Lee

Introduction:

Ho-Jun Lee, a pioneering inventor hailing from Daegu, South Korea, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents:

Ho-Jun Lee's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and sustainable energy solutions.

Career Highlights:

With a career spanning over two decades, Ho-Jun Lee has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the future of various sectors, from healthcare to transportation.

Collaborations:

Throughout his career, Ho-Jun Lee has collaborated with top research institutions, leading tech companies, and innovative startups to bring his inventions to life. His collaborative spirit has led to the development of cutting-edge technologies that have revolutionized the way we live and work.

Conclusion:

In conclusion, Ho-Jun Lee's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor. His contributions to the world of technology continue to inspire and drive progress in the ever-evolving landscape of innovation.

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