The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jul. 22, 2008
Yong-jin Kim, Gyeongsangbuk-Do, KR;
Ji-hoon Kim, Gyeonggi-do, KR;
Dong-kun Lee, Gyeongsangbuk-Do, KR;
Doo-soo Kim, Seoul, KR;
Ho-jun Lee, Daegu, KR;
Yong-Jin Kim, Gyeongsangbuk-Do, KR;
Ji-Hoon Kim, Gyeonggi-do, KR;
Dong-Kun Lee, Gyeongsangbuk-Do, KR;
Doo-Soo Kim, Seoul, KR;
Ho-Jun Lee, Daegu, KR;
Siltron Inc., Gum-si, Gyeongsangbuk-do, KR;
Abstract
Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (SiN) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.