The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jan. 03, 2014
Lg Siltron Inc., Gyeongsangbuk-do, KR;
Kye-Jin Lee, Gyeongsangbuk-do, KR;
Ho-Jun Lee, Daegu, KR;
Young-Jae Choi, Gyeonggi-do, KR;
Jung-Hyun Eum, Seoul, KR;
Chung-Hyun Lee, Gyeongsangbuk-do, KR;
LG SILTRON INC., Gyeongsangbuk-do, KR;
Abstract
Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.