The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Dec. 13, 2012
Applicant:
Lg Siltron, Inc., Gyeongsangbuk-do, KR;
Inventors:
Yong-Jin Kim, Gyeongbuk, KR;
Dong-Kun Lee, Gyeongbuk, KR;
Doo-Soo Kim, Gyeongbuk, KR;
Ho-Jun Lee, Gyeongbuk, KR;
Kye-Jin Lee, Gyeongbuk, KR;
Assignee:
LG Siltron Inc., Gyrongbuk, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); C30B 25/186 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01);
Abstract
A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.