The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 29, 2010
Yong-jin Kim, Gumi-si, KR;
Dong-kun Lee, Gumi-si, KR;
Doo-soo Kim, Gyeongbuk, KR;
Ho-jun Lee, Daegu, KR;
Kye-jin Lee, Gumi-si, KR;
Yong-Jin Kim, Gumi-si, KR;
Dong-Kun Lee, Gumi-si, KR;
Doo-Soo Kim, Gyeongbuk, KR;
Ho-Jun Lee, Daegu, KR;
Kye-Jin Lee, Gumi-si, KR;
Siltron, Inc., Gyeongbuk, KR;
Abstract
A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.