The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Dec. 14, 2007
Doo-soo Kim, Seoul, KR;
Ho-jun Lee, Daegu, KR;
Yong-jin Kim, Gumi-si, KR;
Dong-kun Lee, Gumi-si, KR;
Doo-Soo Kim, Seoul, KR;
Ho-Jun Lee, Daegu, KR;
Yong-Jin Kim, Gumi-si, KR;
Dong-Kun Lee, Gumi-si, KR;
Siltron, Inc., Gumi, KR;
Abstract
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.