The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 23, 2008
Ho-jun Lee, Daegu, KR;
Yong-jin Kim, Gyeongsangbuk-Do, KR;
Dong-kun Lee, Gyeongsangbuk-Do, KR;
Doo-soo Kim, Seoul, KR;
Ji-hoon Kim, Gyeonggi-do, KR;
Ho-Jun Lee, Daegu, KR;
Yong-Jin Kim, Gyeongsangbuk-Do, KR;
Dong-Kun Lee, Gyeongsangbuk-Do, KR;
Doo-Soo Kim, Seoul, KR;
Ji-Hoon Kim, Gyeonggi-do, KR;
Siltron, Inc., Gumi-Si, Gyeongsangbuk-Do, KR;
Abstract
Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.