Company Filing History:

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Nec Corporation

Years Active: 1978-2020

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10854751 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2020-12-01),

2. 10535769 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2020-01-14),

3. 10269961 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2019-04-23),

4. 9947790 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2018-04-17),

5. 9601622 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2017-03-21),

6. 9337305 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2016-05-10),

7. 9153663 - Semiconductor device having a stress-inducing layer between channel region and source and drain regions (2015-10-06),

8. 8384167 - Semiconductor device with field effect transistor and manufacturing method thereof (2013-02-26),

9. 7830703 - Semiconductor device and manufacturing method thereof (2010-11-09),

10. 7723808 - Semiconductor device and method of manufacturing semiconductor device (2010-05-25),

11. 7719043 - Semiconductor device with fin-type field effect transistor and manufacturing method thereof. (2010-05-18),

12. 7701018 - Semiconductor device and method for manufacturing same (2010-04-20),

13. 7612416 - Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same (2009-11-03),

14. 6933569 - SOI MOSFET (2005-08-23),

15. 6916695 - Semiconductor device and method of manufacturing the same (2005-07-12),

Title: The Innovations of Hitoshi Wakabayashi: A Pioneer in Semiconductor Technology

Introduction: Hitoshi Wakabayashi, an accomplished inventor based in Tokyo, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 19 patents to his name, his inventions demonstrate a keen understanding of the complexities of semiconductor devices and their functionalities.

Latest Patents: Among his notable contributions is a semiconductor device featuring a curved gate electrode aligned with a curved side-wall insulating film and a stress-introducing layer placed between the channel region and the source and drain regions. This innovative device includes a channel region formed in a semiconductor substrate, with source and drain regions located on either side, and a gate electrode situated above the channel region with an interposed gate insulating film. The stress-introducing layer is designed to apply stress to the channel region, resulting in a strategic stress distribution that enhances performance by positioning source region-side and drain region-side peaks between the pn junction boundaries of the channel region and the source and drain regions.

Career Highlights: Hitoshi Wakabayashi has worked with prominent companies such as NEC Corporation and Sony Corporation. His experience in these leading technology firms has equipped him with invaluable insights and expertise, enabling him to innovate and push the boundaries of semiconductor design and manufacturing.

Collaborations: Throughout his career, Hitoshi has collaborated with several distinguished professionals in the field, including Satoru Mayuzumi and Shigeharu Yamagami. These collaborations have fostered an environment of creativity and innovation, furthering advancements in semiconductor technology.

Conclusion: Hitoshi Wakabayashi stands as a testament to the power of innovation in the semiconductor industry. His 19 patents reflect not only his ingenuity but also his commitment to advancing technology for the betterment of society. With each invention, he continues to contribute to the evolution of semiconductor devices, paving the way for future advancements.

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