The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 24, 2003
Risho Koh, Tokyo, JP;
Shigeharu Yamagami, Tokyo, JP;
Jong-wook Lee, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
Atsushi Ogura, Tokyo, JP;
Mitsuru Narihiro, Tokyo, JP;
Kohichi Arai, Tokyo, JP;
Hisashi Takemura, Tokyo, JP;
Tohru Mogami, Tokyo, JP;
Toyoji Yamamoto, Tokyo, JP;
Yukinori Ochiai, Tokyo, JP;
Risho Koh, Tokyo, JP;
Shigeharu Yamagami, Tokyo, JP;
Jong-wook Lee, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
Atsushi Ogura, Tokyo, JP;
Mitsuru Narihiro, Tokyo, JP;
Kohichi Arai, Tokyo, JP;
Hisashi Takemura, Tokyo, JP;
Tohru Mogami, Tokyo, JP;
Toyoji Yamamoto, Tokyo, JP;
Yukinori Ochiai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.