The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Jul. 03, 2002
Applicants:
Hitoshi Wakabayashi, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
Inventors:
Hitoshi Wakabayashi, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8238 ;
U.S. Cl.
CPC ...
Abstract
One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrodeof a p-channel MISFET is constituted of a titanium nitride filmand a tungsten filmformed on the filmand a gate electrodeof an n-channel MISFET is constituted of a titanium nitride filmand a tungsten filmformed on the film. The titanium nitride filmis formed by nitrogen ion implantation in the titanium nitride filmto decrease the work function.