The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Dec. 21, 2006
Yoshifumi Okuda, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
Yoshifumi Okuda, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a semiconductor device and a method of manufacturing a semiconductor device in which a driving force can be increased by increasing a strain amount given by a stressed film in a MOS transistor including an elevated region. On a silicon substrate, a device isolation region, a gate insulating film, a gate electrode, an extension, and a sidewall insulating filmare formed. After that, an elevated region is formed, and a source/drain regionand a silicide layerare formed. Subsequently, the sidewall insulating filmis etched to provide a gap from the elevated region, and a stressed filmis buried in the gap.