The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Sep. 29, 2004
Kiyoshi Takeuchi, Tokyo, JP;
Koichi Terashima, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
Shigeharu Yamagami, Tokyo, JP;
Atsushi Ogura, Tokyo, JP;
Masayasu Tanaka, Tokyo, JP;
Masahiro Nomura, Tokyo, JP;
Koichi Takeda, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Koji Watanabe, Tokyo, JP;
Kiyoshi Takeuchi, Tokyo, JP;
Koichi Terashima, Tokyo, JP;
Hitoshi Wakabayashi, Tokyo, JP;
Shigeharu Yamagami, Tokyo, JP;
Atsushi Ogura, Tokyo, JP;
Masayasu Tanaka, Tokyo, JP;
Masahiro Nomura, Tokyo, JP;
Koichi Takeda, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Koji Watanabe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.