Yokkaichi, Japan

Hisashi Kato

This inventor holds 19 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Memory. Top assignees: Toshiba Memory Corporation, Kioxia Corporation, Kabushiki Kaisha Toshiba. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisashi Kato. Retrieved from https://idiyas.com/inventor/hisashi-kato-m51lkvd9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 94.7

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 35(Granted Patents)


Location History:

  • Mie, JP (2013 - 2021)
  • Yokkaichi, JP (2018 - 2024)

Company Filing History:


Years Active: 2013-2025

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Areas of Expertise:
Semiconductor Memory Device
Three-Dimensionally Stacked
Improved Yield
Nonvolatile Memory
Production Method
Manufacturing Method
Memory Cells
Semiconductor Technology
Device Architecture
Memory Innovation
19 patents (USPTO):Explore Patents

Title: Hisashi Kato: A Pioneer in Semiconductor Innovations

Introduction

Hisashi Kato, based in Yokkaichi, Japan, stands out as a notable figure in the realm of semiconductor technology. With an impressive portfolio of 19 patents, Kato has made significant contributions to the development of semiconductor memory devices that enhance data storage and processing capabilities.

Latest Patents

Kato's latest innovations include a groundbreaking semiconductor memory device. This device features a unique structure where a first and second member extend in a first direction along a boundary between two block regions. A support pillar is strategically positioned between these members, with conductive layers arranged in a third direction and divided into portions by the members and the support pillar. Notably, the design incorporates a memory pillar that penetrates through these conductive layers, optimizing performance. Moreover, Kato's patent on the production method for semiconductor memory devices outlines a refined technique involving the lamination of multiple first and second laminates on a semiconductor substrate, which further enhances the structural integrity and functionality of the devices.

Career Highlights

Hisashi Kato has had a distinguished career, primarily associated with renowned companies in the semiconductor industry. He has worked with Toshiba Memory Corporation, where he contributed to various innovative projects, and Kioxia Corporation, where he continued to shape advancements in memory technology. His expertise and forward-thinking approach have positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Kato has collaborated with fellow innovators such as Murato Kawai and Tadashi Iguchi. These partnerships have fostered an environment of creativity and technical excellence, leading to several successful projects and advancements in semiconductor technology.

Conclusion

In summary, Hisashi Kato's contributions to the field of semiconductor memory devices are invaluable. His 19 patents reflect a commitment to innovation that continues to influence the industry. Through his work with prominent corporations and collaboration with talented colleagues, Kato remains a significant force in advancing semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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