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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12200931 B1

PDFFull Text
Date of Patent:
Jan. 14, 2025

Filed:

Oct. 01, 2021

Semiconductor memory device and production method thereof

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tadashi Iguchi, Yokkaichi, JP;

Murato Kawai, Yokkaichi, JP;

Toru Matsuda, Yokkaichi, JP;

Hisashi Kato, Mie, JP;

Megumi Ishiduki, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Mary A Wilczewski

Assistant Examiner:

Tsz K Chiu

Int. Cl.
CPC ...
H01L 23/48 (2006.01); G11C 16/04 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 43/27 (2023.01); H10B 43/50 (2023.01); H01L 21/764 (2006.01); H01L 29/792 (2006.01); H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H01L 23/5226 (2013.01); H10B 43/50 (2023.02); H01L 21/764 (2013.01); H01L 29/7926 (2013.01); H10B 41/20 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02);
Abstract

A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.

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