The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Sep. 11, 2019
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Hisashi Kato, Yokkaichi, JP;

Assignee:

KIOXIA CORPORATION, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first and second conductor layers, a first pillar, a first contact, and a source line drive circuit. The first pillar is passing through the second conductor layers. The first pillar includes a first semiconductor layer and a second insulator layer. The first semiconductor layer includes a side surface partially in contact with the first conductor layer. The first contact is passing through the second conductor layers. The first contact includes a third conductor layer and a third insulator layer. The third conductor layer includes a side surface partially in contact with the first conductor layer. The source line drive circuit is electrically coupled to the first conductor layer via the first contact.


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