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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9966386 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Mar. 10, 2017

Semiconductor memory device and method for manufacturing the same

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Hisashi Kato, Yokkaichi, JP;

Hideki Inokuma, Yokkaichi, JP;

Naoki Yamamoto, Kuwana, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01); H01L 27/11556 (2017.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/31144 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first to third conductive layers extending along a first direction, and a memory portion. A portion of the second conductive layer is provided between the third conductive layer and a portion of the first conductive layer. The first conductive layer includes a first end portion crossing the first direction. The second conductive layer includes a second end portion crossing the first direction. The third conductive layer includes a third end portion crossing the first direction. A position in the first direction of a portion of the second end portion is between a position of the first end portion and a position of the third end portion. The position in the first direction of the portion of the second end portion is between a position of another portion of the second end portion and the position of the third end portion.

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