The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Sep. 10, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Masakazu Sawano, Mie, JP;

Takahiro Tomimatsu, Yokkaichi, JP;

Junichi Shibata, Yokkaichi, JP;

Hideki Inokuma, Yokkaichi, JP;

Hisashi Kato, Yokkaichi, JP;

Kenta Yoshinaga, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 27/11519 (2017.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 27/11548 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 27/11519 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes: a first stack above a substrate and including insulation layers and conductive layers alternately stacked in a first direction, the first stack including a staircase-shaped portion in an end portion of the first stack in a second direction parallel to a main face of the substrate, the staircase-shaped portion including steps and terraces corresponding to the conductive layers, at least a part of the steps having arc shape curved along a third direction crossing the second direction; and a second stack above the substrate and including first and second layers stacked in the first direction. In the second and/or third direction, a dimension of the first stack is larger than a dimension of the second stack.


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