Mie, Japan

Hiroyuki Fukumizu

This inventor holds 27 USPTO granted patents and 3 published patent applications, primarily in Nonvolatile Memory Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation. Active years: 2012-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Fukumizu. Retrieved from https://idiyas.com/inventor/hiroyuki-fukumizu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 70.4

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 190(Granted Patents)


Location History:

  • Mie, JP (2012)
  • Kanagawa-ken, JE (2012)
  • Mie-ken, JP (2012 - 2013)
  • Tokyo, JP (2014)
  • Kanagawa-ken, JP (2013 - 2015)
  • Yokkaichi, JP (2016)
  • Yokohama, JP (2012 - 2019)

Company Filing History:


Years Active: 2012-2019

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Areas of Expertise:
Memory Device
Semiconductor Memory
3D Memory Device
Variable Resistance
Nonvolatile Memory
Information Recording
Manufacturing Method
Memory Cell Block
Diode
Block Film
Carbon Layer
27 patents (USPTO):Explore Patents

Title: Hiroyuki Fukumizu: Pioneering Innovations in Memory Devices

Introduction

Hiroyuki Fukumizu, based in Mie-ken, Japan, has established himself as a prominent figure in the field of memory devices with an impressive portfolio of 27 patents. His innovative contributions continue to influence the development of semiconductor technology and memory solutions.

Latest Patents

Hiroyuki Fukumizu's recent patents highlight his focus on advanced memory technologies. One of his notable inventions is a memory device that features a stacked body comprising first and second electrodes and an oxide layer in between. The second electrode includes a semiconductor layer and a metal-containing region composed of metallic elements that enhance performance. This design allows the memory device to operate in two distinct states, enhancing its versatility.

Another significant patent by Fukumizu involves a semiconductor memory device where multiple conductive layers are strategically stacked at predetermined pitches on a substrate. The architectural design incorporates a memory layer that functions as memory cells across the first conductive layers, demonstrating innovation in both structure and functionality.

Career Highlights

Throughout his career, Hiroyuki Fukumizu has made notable contributions to major companies within the technology sector. He has worked at Kabushiki Kaisha Toshiba and Toshiba Memory Corporation, where his expertise in semiconductor and memory device development has been integral to the companies’ advancement.

Collaborations

Hiroyuki has worked alongside esteemed colleagues, including Yasuhiro Nojiri and Masaki Yamato. Their collaboration has fostered a creative environment, contributing to the innovative progress in memory technology that enhances the capabilities of modern computing.

Conclusion

Hiroyuki Fukumizu's contributions to the field of memory devices position him as a key innovator in the industry. With his extensive patent portfolio and collaborative efforts, he continues to push the boundaries of semiconductor technology, paving the way for future advancements and applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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