The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Aug. 31, 2012
Katsuyuki Sekine, Yokkaichi, JP;
Yasuhiro Nojiri, Yokohama, JP;
Hiroyuki Fukumizu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A diode layer includes a first impurity semiconductor layer that includes a first impurity acting as an acceptor and a second impurity semiconductor layer that includes a second impurity acting as a donor. One end of a first electrode layer contacts the diode layer. One end of a polysilicon layer contacts the other end of the first electrode layer. One end of a variable resistance layer contacts the other end of the polysilicon layer and is able to change a resistance value. A second electrode layer contacts the other end of the variable resistance layer. At least one of a first area and a second area contains a third impurity. The first area includes one end of the polysilicon layer, the second area includes the other end of the polysilicon layer. The third impurity differs from the first impurity and the second impurity.