The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9007809 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 14, 2015

Filed:

Feb. 27, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroyuki Fukumizu, Yokohama, JP;

Shigeki Kobayashi, Kuwana, JP;

Yasuhiro Nojiri, Yokohama, JP;

Masaki Yamato, Yokkaichi, JP;

Takeshi Yamaguchi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/04 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/52 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

A control circuit controls a voltage applied to a memory cell array. A first electrode contacts to a first surface of a variable resistance element, while a second electrode contacts to a second surface of the variable resistance element. The first electrode is configured by a metal, and the second electrode is configured by a P type semiconductor. The control unit, when performing a setting operation of a memory cell, applies a voltage such that a current flows in a direction from the first electrode toward the second electrode.


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