The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 29, 2010
Shuichi Kuboi, Tokyo, JP;
Masayuki Takata, Tokyo, JP;
Tsukasa Nakai, Tokyo, JP;
Hiroyuki Fukumizu, Tokyo, JP;
Yasuhiro Nojiri, Tokyo, JP;
Kenichi Ootsuka, Tokyo, JP;
Shuichi Kuboi, Tokyo, JP;
Masayuki Takata, Tokyo, JP;
Tsukasa Nakai, Tokyo, JP;
Hiroyuki Fukumizu, Tokyo, JP;
Yasuhiro Nojiri, Tokyo, JP;
Kenichi Ootsuka, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.