The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Feb. 14, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroshi Kanno, Yokkaichi, JP;

Takayuki Tsukamoto, Yokkaichi, JP;

Hiroyuki Fukumizu, Yokkaichi, JP;

Yoichi Minemura, Yokkaichi, JP;

Takamasa Okawa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 29/06 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); H01L 27/249 (2013.01); H01L 27/2454 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1658 (2013.01);
Abstract

First, a trench penetrating first conductive layers and interlayer insulating layers is formed. Next, a column-shaped conductive layer is formed to fill the trench via a side wall layer. Then, after formation of the side wall layer, by migration of oxygen atoms between the side wall layer and the first conductive layers or migration of oxygen atoms between the side wall layer and the interlayer insulating layers, a proportion of oxygen atoms in the side wall layer adjacent to the interlayer insulating layers is made larger than a proportion of oxygen atoms in the side wall layer adjacent to the first conductive layers, whereby the side wall layer adjacent to the first conductive layers is caused to function as the variable resistance element.


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