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For the Inventor, By the Inventor

Yokkaichi, Japan

Hiroshi Kanno

This inventor holds 81 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Memory (CPC class G11C13-0069). Top assignees: Kabushiki Kaisha Toshiba, Fujitsu Corporation, Sanbio, Inc.. Active years: 1986-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Kanno. Retrieved from https://idiyas.com/inventor/hiroshi-kanno-fgvyraee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 81 

% Patents Active = 71.6


Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 313(Granted Patents)

Forward Citations (Not Self Cited) = 294(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Miyagi, JP (1993)
  • Numazu, JP (1986 - 1994)
  • Shizuoka-ken, JP (1999)
  • Kanagawa, JP (2003 - 2009)
  • Kawasaki, JP (1999 - 2014)
  • Yokohama, JP (2010 - 2015)
  • Mie-ken, JP (2012 - 2016)
  • Yokosuka, JP (2016)
  • Mie, JP (2012 - 2021)
  • Yokusuka, JP (2019 - 2022)
  • Yokkaichi, JP (2012 - 2023)
  • Yokkaichi Mie, JP (2022 - 2023)

Company Filing History:

goldMedal37 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal12 out of 39,378 
 
Fujitsu Corporation
 patents
bronzeMedal7 out of 38 
 
Sanbio, Inc.
 patents
4. 7 out of 58,147 
 
Sony Corporation
 patents
5. 6 out of 2,955 
 
Toshiba Memory Corporation
 patents
6. 5 out of 3,204 
 
Kioxia Corporation
 patents
7. 4 out of 746 
 
Toshiba Kikai Kabushiki Kaisha
 patents
8. 2 out of 273 
 
Toagosei Company, Ltd.
 patents
9. 1 out of 13 
 
Cellfree Sciences Co., Ltd.
 patents
10. 1 out of 1 
 
Hiroshi Kanno
 patent
11. 1 out of 1,339 
 
Sandisk Corporation
 patents
where one patent can have more than one assignee

Years Active: 1986-2026

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Areas of Expertise:
Semiconductor Memory Device
Nonvolatile Memory
3D Resistive Memory
Voltage Erasing
Data Control Method
CNS Disorders Treatment
Memory System
Manufacturing Method
Resistance Change Memory
Mobile Electronic Apparatus
Semiconductor Storage Device
Neural Precursor Cells
81 patents (USPTO):Explore Patents
1. 12733170 - Semiconductor memory device and method of manufacturing semiconductor memory device (2026-09-08),
2. 12588210 - Semiconductor memory device (2026-03-24),
3. 12114502 - Semiconductor storage device (2024-10-08),
4. 11723204 - Semiconductor storage device (2023-08-08),
5. 11574681 - Semiconductor storage device having voltage erasing operation capability and control method thereof (2023-02-07),
6. 11512284 - Neural precursor cells expressing exogenous Notch intracellular domain (2022-11-29),
7. 11251193 - Semiconductor memory device (2022-02-15),
8. 11018217 - Semiconductor device and method for manufacturing the same (2021-05-25),
9. 10685981 - Semiconductor memory device (2020-06-16),
10. 10196605 - Treatment of CNS disorders using descendants of MSCS expressing an exogenous Notch intracellular domain (2019-02-05),
11. 9991272 - Semiconductor memory device (2018-06-05),
12. 9887273 - Semiconductor memory device (2018-02-06),
13. 9780147 - Semiconductor memory device (2017-10-03),
14. 9437296 - Three-dimensional resistive memory device with adjustable voltage biasing (2016-09-06),
15. 9399046 - Treatment of CNS disorders using descendants of MSCs expressing an exogenous Notch intracellular domain (2016-07-26),

Title: Hiroshi Kanno: Innovator in Semiconductor Storage Technology

Introduction

Hiroshi Kanno, based in Yokkaichi, Japan, is a prolific inventor with an impressive portfolio of 79 patents. His work focuses primarily on semiconductor storage devices, pushing the boundaries of technology in this field.

Latest Patents

Kanno's latest innovation includes a sophisticated semiconductor storage device that comprises a first conductive layer and a stack of multiple second conductive layers aligned in a specific direction. This device features a columnar body that extends through the stack and encompasses a semiconductor layer along with a charge storage film positioned between the conductive layers. Notably, the semiconductor layer has a unique configuration with regions that vary in impurity concentrations, which enhances its functionality and efficiency.

Career Highlights

Over the years, Hiroshi Kanno has made significant contributions while working with renowned companies such as Kabushiki Kaisha Toshiba and Fujitsu Corporation. His work in these organizations has not only advanced his career but has also influenced the semiconductor industry.

Collaborations

Hiroshi has collaborated with notable professionals in the industry, including Takayuki Tsukamoto and Yoichi Minemura. These collaborations have enriched his inventions and contributed to the development of groundbreaking technology in semiconductor storage devices.

Conclusion

Hiroshi Kanno stands out as a leading figure in semiconductor innovation. With his extensive patent portfolio and dedicated work, he continues to shape the future of storage technology, demonstrating the vital role of inventors in the advancement of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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