The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Aug. 23, 2019
Toshiba Memory Corporation, Tokyo, JP;
Takashi Ishida, Mie, JP;
Takahiro Sugimoto, Mie, JP;
Hiroshi Kanno, Mie, JP;
Tatsuya Okamoto, Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor layer that is an electrically-conductive polycrystalline semiconductor layer and a second semiconductor layer on the first semiconductor layer. The second semiconductor layer is an electrically-conductive polycrystalline semiconductor layer having a smaller average grain size than the first semiconductor layer. A plurality of electrode layers are stacked on the second semiconductor layer at intervals in a first direction. A third semiconductor layer extends in the first direction through the first semiconductor layer, the second semiconductor layer, and each of the electrode layers and contacts the second semiconductor layer. A charge storage layer is between the plurality of electrode layers and the third semiconductor layer.