The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Mar. 21, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Shigeki Kobayashi, Mie-ken, JP;
Takeshi Yamaguchi, Mie-ken, JP;
Yasuhiro Nojiri, Kanagawa-ken, JP;
Masaki Yamato, Mie-ken, JP;
Hiroyuki Fukumizu, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 45/146 (2013.01); H01L 45/06 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 45/144 (2013.01); H01L 45/1233 (2013.01); H01L 45/04 (2013.01); H01L 45/147 (2013.01);
Abstract
According to one embodiment, a nonvolatile memory device includes a first wiring, a second wiring, and a memory cell provided between the first wiring and the second wiring. The memory cell includes a memory layer, a rectifying element layer, and a protective resistance layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type.