Tokyo, Japan

Hiroshi Sakuma

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Elpida Memory, Inc., Hitachi, Ltd., Kinugawa Rubber Industrial Co., Ltd.. Active years: 1989-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Sakuma. Retrieved from https://idiyas.com/inventor/hiroshi-sakuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 52.9

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 181(Granted Patents)


Location History:

  • Chiba, JP (1989 - 2001)
  • Ome, JP (2000 - 2007)
  • Tokyo, JP (2004 - 2010)

Company Filing History:


Years Active: 1989-2010

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Areas of Expertise:
Metal Oxide Film
ALD Process
Capacitor Dielectric
Semiconductor Integrated Circuits
MIM Capacitor
Conductive Film
Crown Structure
Silicon Plug
Liquid Crystal Display
Weatherstrip
Automotive Sealing
Thermal Treatment
17 patents (USPTO):Explore Patents

Title: Innovations of Hiroshi Sakuma

Introduction

Hiroshi Sakuma is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on advanced methods for forming metal oxide films and enhancing capacitor insulation.

Latest Patents

One of his latest patents is a method for forming a metal oxide film. This innovative technique involves depositing a monoatomic film made of a metal by supplying a metal source that includes the metal and no oxygen. The process then continues with the deposition of a metal oxide film using a chemical vapor deposition (CVD) technique. This method results in a metal oxide film with superior properties and increased throughput. Another notable patent is the ALD process for capacitor dielectric. This method is designed for manufacturing semiconductor devices and includes a dual-stage deposition step. The first stage introduces tantalum penta-ethoxide into a reaction chamber containing a semiconductor substrate with a lower electrode made of ruthenium. This results in the formation of a tantalum oxide film through a vapor-phase growth method. The second stage involves removing the material gas and byproducts from the chamber using nitrogen gas, with the dual-stage process being repeated multiple times to achieve the desired film quality.

Career Highlights

Hiroshi Sakuma has worked with notable companies in the semiconductor industry, including Elpida Memory, Inc. and Hitachi, Ltd. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Throughout his career, Sakuma has collaborated with esteemed colleagues such as Yoshitaka Nakamura and Hidekazu Goto. These partnerships have contributed to the advancement of technology in the semiconductor field.

Conclusion

Hiroshi Sakuma's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods continue to influence the development of advanced materials and processes in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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