The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Jan. 30, 2003
Shinpei Iijima, Tokyo, JP;
Hiroshi Sakuma, Tokyo, JP;
Other;
Abstract
In a semiconductor integrated circuit device, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode are contacted to each other on the entire inner wall of the trench. Oxygen permeated into the lower electrode during a thermal treatment of a tantalum oxide film is consumed at an interface between the polycrystalline silicon film and the lower electrode. Thus, oxygen does not reach the surface of a silicon plug below the lower electrode that would cause oxidation on the surface of the silicon plug and form a high-resistance oxide layer when a dielectric film formed on a lower electrode of a capacitor of a DRAM is subjected to a thermal treatment in an oxygen atmosphere.