The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Oct. 07, 2004
Yoshitaka Nakamura, Ome, JP;
Tsuyoshi Tamaru, Hachiouji, JP;
Naoki Fukuda, Ome, JP;
Hidekazu Goto, Fussa, JP;
Isamu Asano, Iruma, JP;
Hideo Aoki, Musashi-murayama, JP;
Keizo Kawakita, Ome, JP;
Satoru Yamada, Ome, JP;
Katsuhiko Tanaka, Ome, JP;
Hiroshi Sakuma, Ome, JP;
Masayoshi Hirasawa, Ome, JP;
Yoshitaka Nakamura, Ome, JP;
Tsuyoshi Tamaru, Hachiouji, JP;
Naoki Fukuda, Ome, JP;
Hidekazu Goto, Fussa, JP;
Isamu Asano, Iruma, JP;
Hideo Aoki, Musashi-murayama, JP;
Keizo Kawakita, Ome, JP;
Satoru Yamada, Ome, JP;
Katsuhiko Tanaka, Ome, JP;
Hiroshi Sakuma, Ome, JP;
Masayoshi Hirasawa, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The semiconductor device is formed according to the following steps. A TiN filmand a W filmare deposited on a silicon oxide filmincluding the inside of a via-holeby the CVD method and thereafter, the W filmand TiN filmon the silicon oxide filmare etched back to leave only the inside of the via-holeand form a plug. Then, a TiN film, Al-alloy film, and Ti filmare deposited on the silicon oxide filmincluding the surface of the plugby the sputtering method and thereafter, the Ti film, Al-alloy film, and TiN filmare patterned to form second-layer wiringsand