Masayoshi Hirasawa is a prominent inventor based in Ome, Japan, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Hirasawa has made remarkable advancements in the field, particularly in the design and fabrication of semiconductor integrated circuits.

Latest Patents

Hirasawa's latest patents include a semiconductor integrated circuit device that features a conductive film containing metal atoms bondable to a halogen element. The process involves depositing a titanium nitride (TiN) film and a tungsten (W) film on a silicon oxide film, including the interior of a via-hole, using the chemical vapor deposition (CVD) method. Following this, the W and TiN films are etched back to leave only the interior of the via-hole, forming a plug. Subsequently, a TiN film, aluminum-alloy film, and titanium (Ti) film are deposited on the silicon oxide film, including the surface of the plug, through the sputtering method. The films are then patterned to create second-layer wirings. Another patent details a method for fabricating semiconductor integrated circuits, which follows a similar process.

Career Highlights

Throughout his career, Hirasawa has worked with notable companies, including Hitachi, Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Hirasawa has collaborated with esteemed colleagues such as Yoshitaka Nakamura and Isamu Asano, further enhancing his work in the semiconductor field.

Conclusion

Masayoshi Hirasawa's contributions to semiconductor technology through his innovative patents and collaborations have established him as a key figure in the industry. His work continues to influence advancements in integrated circuit design and fabrication.

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