The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Jun. 29, 1998
Yoshitaka Nakamura, Ome, JP;
Tsuyoshi Tamaru, Hachiouji, JP;
Naoki Fukuda, Ome, JP;
Hidekazu Goto, Fussa, JP;
Isamu Asano, Iruma, JP;
Hideo Aoki, Musashi-murayama, JP;
Keizo Kawakita, Ome, JP;
Satoru Yamada, Ome, JP;
Katsuhiko Tanaka, Ome, JP;
Hiroshi Sakuma, Ome, JP;
Masayoshi Hirasawa, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.