The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Sep. 03, 1999
Applicant:
Inventors:

Yoshitaka Nakamura, Ome, JP;

Masayoshi Hirasawa, Ome, JP;

Isamu Asano, Iruma, JP;

Tsuyoshi Tamaru, Hachioji, JP;

Satoru Yamada, Ome, JP;

Keizo Kawakita, Ome, JP;

Toshihiro Sekiguchi, Hidaka, JP;

Yoshitaka Tadaki, Hannou, JP;

Takuya Fukuda, Kodaira, JP;

Assignee:

Hitachi, LTD, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
Abstract

In order to improve connection reliability of a feeding interconnection connected to an electrode of each of the information storage capacitive elements of a DRAM, the formation of a through hole for connecting the information storage capacitive element formed over each memory cell selection MISFET and a feeding interconnection is performed in a process different from that for the formation of a through hole for connecting an interconnection of a second wiring layer in a peripheral circuit, which is formed over the information storage capacitive element and an interconnection corresponding to a first wiring layer.


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