The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Sep. 18, 2000
Applicant:
Inventors:
Masayoshi Saito, Hachiouji, JP;
Katsuhiko Hotta, Hachiouji, JP;
Masayoshi Hirasawa, Ome, JP;
Masayuki Kojima, Kokubunji, JP;
Hiroyuki Uchiyama, Tachikawa, JP;
Hiroyuki Maruyama, Ome, JP;
Takuya Fukuda, Kodaira, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
Abstract
An SOG film obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode of a MISFET (Qs, Qn, Qp). A polysilazan SOG film not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers ( ).