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For the Inventor, By the Inventor

Ome, Japan

Hiroyuki Maruyama

This inventor holds 13 USPTO granted patents and 1 published patent application. Top assignees: Renesas Technology Corp., Hitachi, Ltd., Hitachi Ulsi Systems C O., Ltd.. Active years: 2002-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Maruyama. Retrieved from https://idiyas.com/inventor/hiroyuki-maruyama-q3dwos2j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 46.2

Average Co-Inventor Count = 5.2

ph-index = 6

Forward Citations = 146(Granted Patents)


Company Filing History:

goldMedal5 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal4 out of 42,740 
 
Hitachi, Ltd.
 patents
bronzeMedal1 out of 1 
 
Hitachi Ulsi Systems C O., Ltd.
 patent
4. 1 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
5. 1 out of 7,657 
 
Renesas Electronics Corporation
 patents
6. 3 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2011

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13 patents (USPTO):Explore Patents
1. 8012871 - Semiconductor device and manufacturing method thereof (2011-09-06),
2. 7723849 - Semiconductor device and manufacturing method thereof (2010-05-25),
3. 7208391 - Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films (2007-04-24),
4. 7176121 - Semiconductor device and manufacturing method thereof (2007-02-13),
5. 7084063 - Fabrication method of semiconductor integrated circuit device (2006-08-01),
6. 7074691 - Method of manufacturing a semiconductor integrated circuit device that includes forming dummy patterns in an isolation region prior to filling with insulating material (2006-07-11),
7. 7060589 - Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth (2006-06-13),
8. 6849885 - Method of producing a semiconductor integrated circuit device and the semiconductor integrated circuit device (2005-02-01),
9. 6833331 - Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen (2004-12-21),
10. 6723631 - Fabrication method of semiconductor integrated circuit device (2004-04-20),
11. 6693008 - Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device (2004-02-17),
12. 6509277 - Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen (2003-01-21),
13. 6482727 - Method of producing a semiconductor integrated circuit device and the semiconductor integrated circuit device (2002-11-19),

Title: Hiroyuki Maruyama: Innovator in Semiconductor Technology

Introduction

Hiroyuki Maruyama is a prominent inventor based in Ome, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

One of his latest patents involves a semiconductor device and a manufacturing method aimed at enhancing the reliability of copper damascene wiring. This innovation features a film between wiring layers and a film between via layers made of an SiOC film with a low dielectric constant. The design includes stopper insulating films and a cap insulating film, which are composed of a laminated film of an SiCN film A and an SiC film B. This approach effectively reduces leakage current and improves adhesion between the various films, thereby enhancing overall device performance.

Career Highlights

Hiroyuki Maruyama has worked with notable companies in the technology sector, including Renesas Technology Corporation and Hitachi, Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Maruyama has collaborated with esteemed colleagues such as Katsuhiko Hotta and Naohumi Ohashi. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Hiroyuki Maruyama's contributions to semiconductor technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing, paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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