The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 23, 2003
Junji Noguchi, Ome, JP;
Shoji Asaka, Hanno, JP;
Nobuhiro Konishi, Ome, JP;
Naohumi Ohashi, Hanno, JP;
Hiroyuki Maruyama, Ome, JP;
Junji Noguchi, Ome, JP;
Shoji Asaka, Hanno, JP;
Nobuhiro Konishi, Ome, JP;
Naohumi Ohashi, Hanno, JP;
Hiroyuki Maruyama, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The copper interconnect formed by the use of a damascene technique is improved in dielectric breakdown strength (reliability). During post-CMP cleaning, alkali cleaning, a deoxidizing process due to hydrogen annealing or the like, and acid cleaning are carried out in this order. After the post-CMP cleaning and before forming an insulation film for a cap film, hydrogen plasma and ammonia plasma processes are carried out on the semiconductor substrate. In this way, a copper-based buried interconnect is formed in an interlayer insulation film structured of an insulation material having a low dielectric constant.