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For the Inventor, By the Inventor

Hanno, Japan

Naohumi Ohashi

This inventor holds 13 USPTO granted patents and 1 published patent application. Top assignees: Renesas Technology Corp., Hitachi, Ltd., Hitachi Tokyo Electronics Co., Ltd.. Active years: 2002-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohumi Ohashi. Retrieved from https://idiyas.com/inventor/naohumi-ohashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 53.8

Average Co-Inventor Count = 4.5

ph-index = 7

Forward Citations = 182(Granted Patents)


Location History:

  • Hannou, JP (2004 - 2007)
  • Ome, JP (2007)
  • Hanno, JP (2002 - 2010)
  • Tokyo, JP (2007 - 2011)

Company Filing History:

goldMedal10 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal2 out of 42,731 
 
Hitachi, Ltd.
 patents
bronzeMedal1 out of 21 
 
Hitachi Tokyo Electronics Co., Ltd.
 patents
4. 1 out of 7,654 
 
Renesas Electronics Corporation
 patents
where one patent can have more than one assignee

Years Active: 2002-2011

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13 patents (USPTO):Explore Patents
1. 8012871 - Semiconductor device and manufacturing method thereof (2011-09-06),
2. 7723849 - Semiconductor device and manufacturing method thereof (2010-05-25),
3. 7642652 - Semiconductor integrated circuit device and a method of manufacturing the same (2010-01-05),
4. 7321171 - Semiconductor integrated circuit device (2008-01-22),
5. 7232757 - Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device (2007-06-19),
6. 7176121 - Semiconductor device and manufacturing method thereof (2007-02-13),
7. 7163886 - Semiconductor integrated circuit device and process for manufacturing the same (2007-01-16),
8. 7084063 - Fabrication method of semiconductor integrated circuit device (2006-08-01),
9. 6818546 - Semiconductor integrated circuit device and a method of manufacturing the same (2004-11-16),
10. 6764950 - Fabrication method for semiconductor integrated circuit device (2004-07-20),
11. 6734104 - Method of manufacturing a semiconductor device and a semiconductor device (2004-05-11),
12. 6723631 - Fabrication method of semiconductor integrated circuit device (2004-04-20),
13. 6495466 - Method of manufacturing a semiconductor device and a semiconductor device (2002-12-17),

Title: Naohumi Ohashi: Innovator in Semiconductor Technology

Introduction

Naohumi Ohashi is a prominent inventor based in Hanno, Japan, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, he has made remarkable advancements in the field, particularly in improving the reliability of copper damascene wiring.

Latest Patents

One of his latest patents focuses on a semiconductor device and its manufacturing method. This innovation aims to enhance the reliability of copper damascene wiring by utilizing a film between wiring layers and a film between via layers made of an SiOC film with low dielectric constant. The design incorporates stopper insulating films and a cap insulating film, which are comprised of a laminated film of an SiCN film A and an SiC film B. This approach effectively reduces leakage current and improves adhesion between the various films, thereby enhancing overall device performance.

Career Highlights

Throughout his career, Naohumi Ohashi has worked with notable companies such as Renesas Technology Corporation and Hitachi, Ltd. His experience in these leading technology firms has allowed him to develop and refine his innovative ideas in semiconductor manufacturing.

Collaborations

Naohumi has collaborated with esteemed colleagues, including Junji Noguchi and Tsuyoshi Tamaru, contributing to a rich exchange of ideas and advancements in their field.

Conclusion

Naohumi Ohashi's work in semiconductor technology exemplifies the spirit of innovation and dedication to improving electronic devices. His patents continue to influence the industry, showcasing his expertise and commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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