The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Aug. 13, 2004
Tsuyoshi Fujiwara, Hamura, JP;
Masahiro Ushiyama, Kokubunji, JP;
Katsuhiko Ichinose, Ome, JP;
Naohumi Ohashi, Ome, JP;
Tetsuo Saito, Tokorozawa, JP;
Tsuyoshi Fujiwara, Hamura, JP;
Masahiro Ushiyama, Kokubunji, JP;
Katsuhiko Ichinose, Ome, JP;
Naohumi Ohashi, Ome, JP;
Tetsuo Saito, Tokorozawa, JP;
Hitachi Tokyo Electronics Co., Ltd., Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride filmfor self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride filmconstituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride filmis smaller than that contained in the silicon nitride film, making it possible to suppress hydrogen release from the silicon nitride film