The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Oct. 15, 2007
Tatsuyuki Saito, Ome, JP;
Naohumi Ohashi, Hanno, JP;
Toshinori Imai, Ome, JP;
Junji Noguchi, Ome, JP;
Tsuyoshi Tamaru, Hachiouji, JP;
Tatsuyuki Saito, Ome, JP;
Naohumi Ohashi, Hanno, JP;
Toshinori Imai, Ome, JP;
Junji Noguchi, Ome, JP;
Tsuyoshi Tamaru, Hachiouji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.