The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Dec. 18, 2001
Yasuhiro Shimamoto, Hachioji, JP;
Masahiko Hiratani, Akishima, JP;
Yuichi Matsui, Kokubunji, JP;
Satoshi Yamamoto, Ome, JP;
Toshihide Nabatame, Tsukuba, JP;
Toshio Ando, Kunitachi, JP;
Hiroshi Sakuma, Ome, JP;
Shinpei Iijima, Akishima, JP;
Yasuhiro Shimamoto, Hachioji, JP;
Masahiko Hiratani, Akishima, JP;
Yuichi Matsui, Kokubunji, JP;
Satoshi Yamamoto, Ome, JP;
Toshihide Nabatame, Tsukuba, JP;
Toshio Ando, Kunitachi, JP;
Hiroshi Sakuma, Ome, JP;
Shinpei Iijima, Akishima, JP;
Renesas Techonology Corp., Tokyo, JP;
Abstract
A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.